Solution processed molecular floating gate for flexible flash memories
نویسندگان
چکیده
منابع مشابه
Solution processed molecular floating gate for flexible flash memories
Solution processed fullerene (C60) molecular floating gate layer has been employed in low voltage nonvolatile memory device on flexible substrates. We systematically studied the charge trapping mechanism of the fullerene floating gate for both p-type pentacene and n-type copper hexadecafluorophthalocyanine (F16CuPc) semiconductor in a transistor based flash memory architecture. The devices base...
متن کاملMolecular and Quantum Dot Floating Gate Non - Volatile Memories
Conventional Flash memory devices face a scaling issue that will impede memory scaling beyond the 50nm node: a reliability issue involving the tunneling oxide thickness and charge retention. A possible solution is to replace the continuous floating gate, where charge is stored, with a segmented charge storage film, so that leakage through defects in the tunneling oxide would be localized. We fi...
متن کاملProtein-Mediated Nanocrystal Assembly for Floating Gate Flash Memory Fabrication
Dedication To my parents and my husband Acknowledgements The completion of this work would never have been possible without the inspiration and support from a lot of people and I know for sure however sincere an effort I might make to acknowledge the contributions of everybody who helped me through this, it will always fall short of what actually they mean to me. I would like to acknowledge, fo...
متن کاملThreshold voltage shift of heteronanocrystal floating gate flash memory
Simulations of threshold voltage shift of a p-channel Ge/Si heteronanocrystal floating gate memory device were carried out using both a numerical two-dimensional Poisson–Boltzmann method and an equivalent circuit model. The results show that the presence of a Ge dot on top of a Si dot significantly prolongs the retention time of the device, indicated by the time decay behavior of the threshold ...
متن کاملThreshold Voltage Shift in Hetero-nanocystal Floating Gate Flash Memory
The threshold voltage shift of a p-channel Ge/Si hetero-nanocrystal floating gate memory device was investigated both numerically and phenomenologically. The numerical investigations, by solving 2-D Poisson-Boltzmann equation, show that the presence of the Ge on Si dot tremendously prolongs the retention time, reflected by the time decay behavior of the threshold voltage shift. The increase of ...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Scientific Reports
سال: 2013
ISSN: 2045-2322
DOI: 10.1038/srep03093